copyright ? harris corporation 1995 5-12 semiconductor mur870e, mur880e, MUR890E, mur8100e, rurp870, rurp880, rurp890, rurp8100 8a, 700v - 1000v ultrafast diodes features ? ultrafast with soft recovery characteristic (t rr < 75ns) ? +175 o c rated junction temperature ? reverse voltage up to 1000v ? avalanche energy rated applications ? switching power supply ? power switching circuits ? general purpose description mur870e, mur880e, MUR890E, mur8100e and rur870, rur880, rur890, rur8100 are ultrafast dual diodes (t rr < 75ns) with soft recovery characteristics. they have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. these devices are intended for use as energy steering/ clamping diodes and recti?ers in a variety of switching power supplies and other power switching applications. their low stored charge and ultrafast recovery with soft recovery char- acteristics minimizes ringing and electrical noise in many power switching circuits thus reducing power loss in the switching transistor. april 1995 package jedec to-220ac symbol packaging availability part number package brand mur870e to-220ac mur870 mur880e to-220ac mur880 MUR890E to-220ac mur890 mur8100e to-220ac mur8100 rurp870 to-220ac rurp870 rurp880 to-220ac rurp880 rurp890 to-220ac rurp890 rurp8100 to-220ac rurp8100 note: when ordering, use entire part number. cathode (flange) cathode anode k a absolute maximum ratings t c = +25 o c, unless otherwise speci?ed mur870e rurp870 mur880e rurp880 MUR890E rurp890 mur8100e rurp8100 peak repetitive reverse voltage. . . . . . . . . . . . . . . . . .v rrm 700v 800v 900v 1000v working peak reverse voltage . . . . . . . . . . . . . . . . . . v rwm 700v 800v 900v 1000v dc blocking voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 700v 800v 900v 1000v average rectified forward current . . . . . . . . . . . . . . . . i f(av) total device forward current at rated v r and t c = +150 o c) 8a 8a 8a 8a peak forward repetitive current . . . . . . . . . . . . . . . . . . i frm (rated v r , square wave 20khz) 16a 16a 16a 16a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . .i fsm (surge applied at rated load condition halfwave 1 phase 60hz) 100a 100a 100a 100a operating and storage temperature . . . . . . . . . . . . t stg , t j -55 o c to +175 o c -55 o c to +175 o c -55 o c to +175 o c -55 o c to +175 o c file number 2780.3
5-13 mur870e, mur880e, MUR890E, mur8100e, rurp870, rurp880, rurp890, rurp8100 electrical speci?cations t c = +25 o c, unless otherwise speci?ed. symbol test condition limits units mur870e, rurp870 mur880e, rurp880 MUR890E, rurp890 mur8100e, rurp8100 min typ max min typ max min typ max min typ max v f i f = 8a t c = +150 o c - - 1.50 - - 1.50 - - 1.50 - - 1.50 v i f = 8a t c = +25 o c - - 1.80 - - 1.80 - - 1.80 - - 1.80 v i r at t c = +150 o c v r = 700v - - 500 - - - - - - - - - m a v r = 800v - - - - - 500 - - - - - - m a v r = 900v - - - - - - - - 500 - - - m a v r = 1000v - - - - - - - - - - - 500 m a i r at t c = +25 o c v r = 700v - - 100 - - - - - - - - - m a v r = 800v - - - - - 100 - - - - - - m a v r = 900v - - - - - - - - 100 - - - m a v r = 1000v - - - - - - - - - - - 100 m a t rr i f = 1a - - 100 - - 100 - - 100 - - 100 ns i f = 8a - - 110 - - 110 - - 110 - - 110 ns t a i f = 1a -40- -40- -40- - 40 - ns i f = 8a -45- -45- -45- - 45 - ns t b i f = 1a -20- -20- -20- - 20 - ns i f = 8a -20- -20- -20- - 20 - ns r q jc - - 2.0 - - 2.0 - - 2.0 - - 2.0 o c/w e avl see fig. 7 & 8 - - 20 - - 20 - - 20 - - 20 mj definitions v f = instantaneous forward voltage (pw = 300 m s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time at di f /dt = 100a/ m s (see figure 2), summation of t a + t b . t a = time to reach peak reverse current at di f /dt = 100a/ m s (see figure 2). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 2). r q jc = thermal resistance junction to case. e avl = controlled avalanche energy (see figures 7 and 8). pw = pulse width. d = duty cycle. figure 1. t rr test circuit figure 2. definitions of t rr , t a and t b c1 l loop dut q 3 r 3 q 4 q 2 r 1 r 2 -v 4 q 1 -v 2 0 0 +v 1 t 1 t 2 t 3 r 4 +v 3 v 1 amplitude controls i f v 2 amplitude controls d i f /dt l 1 = self inductance of r 4 t 1 3 5t a(max) t 2 > t rr t 3 > 0 l 1 r 4 t a(min) 10 + l loop i f t rr t a t b 0 i rm 0.25 i rm v r v rm (rec) di f dt
5-14 mur870e, mur880e, MUR890E, mur8100e, rurp870, rurp880, rurp890, rurp8100 typical performance curves figure 3. forward voltage vs forward current characteristic figure 4. average forward current vs average power dissipation figure 5. average forward current vs case temperature figure 6. average forward current vs ambient temperature figure 7. avalanche energy test circuit figure 8. current voltage waveform i l peak = 1a, l = 40mh, r < 0.1 w , e avl = ( 1 / 2 ) li 2 [v avl /(v avl - v dd )] v f , forward voltage (v) i f , forward current (a) +175 o c maximum +25 o c typical +25 o c maximum 3.5 2.5 1.5 0.1 1.0 10.0 60.0 0.0 3.0 2.0 1.0 0.5 p d , average power dissipation (w) i f , average forward current (a) dc t j = +175 o c square wave 24 12 6 0 035 10 18 7 22 20 16 14 10 8 4 2 12 4 6 89 t c , case temperature ( o c) 10 8 4 2 140 160 180 6 0 150 170 dc square wave 9 7 5 3 1 i f(avg) , average current (a) 10 9 8 7 6 5 4 3 0 0 40 80 120 160 180 t a , ambient temperature ( o c) i f(avg) , average current (a) r q ja = +12 o c/w 20 60 100 140 2 1 r q ja = +60 o c/w (no heat sink) 12v q 2 q 1 12v 130 w dut current sense + l r 1m w v dd 130 w - v dd iv t 0 t 1 t 2 i l v avl t
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